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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL416 DESCRIPTION *Collector-Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) *Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A *Very High Switching Speed APPLICATIONS *Designed for use in lighting applications and low cost switchmode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 1600 800 9 UNIT V Collector Current-Continuous Collector Current-peak tp<5ms Base Current-Continuous ww w scs .i 6 9 5 8 110 150 -65~150 .cn mi e V V A A A A W IBM PC Ti Tstg Base Current-peak tp<5ms Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-A PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.14 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES ICEO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; L= 25mH IE= 10mA; IC= 0 IC= 2A; IB= 0.4A B BUL416 MIN 800 9 TYP. MAX UNIT V V 1.5 3.0 1.2 1.5 0.1 0.5 0.25 V V V V mA mA IC= 4A; IB= 1.33A B IC= 2A; IB= 0.4A B IC= 4A; IB= 1.33A B VCE= 1600V; VBE= 0 VCE= 1600V; VBE= 0; TC= 125 Switching Times, Inductive Load ts tf Storage Time Fall Time ww w scs .i VCE= 800V; IB= 0 IC= 10mA; VCE= 5V IC= 0.7A; VCE= 5V .cn mi e 10 12 2.3 0.65 40 IC= 3A; VCL= 200V; L= 200H; IB1= 1A; VBE(off)= -5V; RBB= 0 s s hFE-2 Classifications A 12-27 B 25-40 isc Websitewww.iscsemi.cn |
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